Electronics in Flatland

Date and Time: 
Fri, 10/19/2018 - 2:00pm
Speaker: 
Professor Sanjay Banerjee
Affiliation: 
Director of Microelectronics Research Center University of Texas, Austin, TX
Location: 

Discovery Park B155

Abstract: 

2D materials such as graphene, transition metal dichalcogenides and topological insulators have opened up avenues in beyond-CMOS device concepts. We will discuss our work involving single or many-particle 2D-2D tunneling, leading to transistors with negative differential resistance.  We also explore spintronics in these systems for novel logic and memory devices. We will also discuss the use of these materials in less esoteric, but more practical high frequency, mechanically flexible FETs for IoT applications.

Biography: 

Sanjay Banerjee is the Cockrell Family Regents Chair Professor of Electrical and Computer Engineering and Director, Microelectronics Research Center, at the University of Texas at Austin. He received his B.Tech from IIT, Kharagpur, and his Ph.D. from the University of Illinois at Urbana-Champaign in 1979 and 1983 respectively, in electrical engineering. He worked at Texas Instruments, Dallas from 1983-87 on 4Meg DRAMs, and has been at UT Austin since then, where he works on beyond-CMOS nanoelectronic transistors based on 2D materials and spintronics, fabrication and modeling of advanced MOSFETs, and solar cells.