Mohamed El Bouanani

Associate Professor
Discovery Park E111
940-369-8109
bouanani@unt.edu
  • Biography

    PhD, Physics, Universite Claude Bernard Lyon I, 1990
    MS (DEA), Nuclear and Atomic Physics and Apps., Universite Claude Bernard Lyon I, 1986

    2006 - Present  Associate Professor, Department of Materials Science and Eng., UNT

    2001 - 2006  Assistant Professor, Department of Materials Science and Eng., UNT

  • Research
    • Growth, Processing and Characterization of inorganic thin film nanostructures for Micro/Nano-electronic and Photovoltaic Applications
    • Nanoscale Interfacial studies of complex multi-layered nanostructures: Size effects on Thermal Stability, Diffusion and Reactions,..
    • Sputter Deposition, Chemical Vapor Deposition and Thermal Evaporation of Inorganic Thin Films:High-k Dielectrics, Advanced Metal Electrodes, Diffusion Barriers
    • Atomic transport, Oxidation and Nitridation studies of thin film nanostructures
    • Hydrogen and Impurity Defects in inorganic thin films
    • Plasma and Ion Irradiation/modification of materials
    • Advanced Ion Beam Analysis methods: RBS, NRA, ERDA, PIXE, Channeling
    • X-ray Photoelectron Scpectroscopy, Ultra-Violet Spectroscopy and Auger Electron Spectroscopy
  • Publications
    1. P. R. Poudel, P.P. Poudel, Sharma, B.P., Hwang, J.Y., B. Rout, M. El Bouanani, F.D. McDaniel.“Synthesis of buried layers of β-SiC in Si by multiple energy carbon ion implantations and post thermal annealing”Thin Solid Films, v 524, p 35-38, December 1, 2012
    2. P. R. Poudel, P.P. Poudel, B. Rout, M. El Bouanani, F.D. McDaniel “An XPS study to investigate the dependence of carbon ion fluences in the formation of buried SiC”Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, v 283, p 93-96, July 15, 2012
    3. H.N. Alshareef, C. Huffman, H.C. Wen, M. Quevedo-Lopez, B.E. Gnade and M. El Bouanani“Impact of Carbon Incorporation on the Effective Work Function of Metal Nitride Gate Electrodes”, Electrochemical & Solid  State Letters, 11(7), p182-184, (2008).
    4. P. Pelicon, M. El Bouanani, G.V. Ravi Prasad , A. Razpet, B. N. Guo, D. Birt,  J. L. Duggan and F. D. McDaniel,  “Depth of origin of desorbed boron In heavy ion irradiation of ultra-shallow boron implanted Si”,  Radiation Effects and Defects in Solids, Vol 161, No. 8, August 2006, 487-494.
    5. M. M. Hussain, M. A. Quevedo-Lopez, H. N. Alshareef, H.C. Wen, D. Larison, B. Gnade and M. El Bouanani, “Thermal annealing effects on a representative high-k/metal film stack”, Semiconductor Science and Technology, 21 (2006), 1437-1440.
    6.  H.N. Alshareef,  H.C. Wen,  H.R. Harris,  K. Choi,  H.F. Luan,  P. Lysaght,  P. Majhi,  B.H. Lee,  M. El Bouanani,  V. Ukirde, “Modulation of the work function of silicon gate electrode using thin TaN interlayers”; Appl.  Phys.  Lett., 87, 521091 (2005).
    7. T. N. Arunagiri, Y. Zhang, O. Chyan, M. El Bouanani, M. J. Kim, C. T. Wu, K. H. Chen, and L. C. Chen, “A 5 nm Ruthenium Thin Film as a Directly Plate-able Copper Diffusion Barrier”Appl. Phys. Lett., 86, 83104 (2005).
    8. S. Addepalli, P. Sivasubramani, M. El Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Deposition of Hf-silicate gate dielectric on SixGe1-x(100): detection of interfacial layer growth”, J. Vac. Science Tech. A22, 616-623 (2004).
    9. P. Punchaipetch, G. Pant, M. Quevedo-Lopez, C. Yao, M. El Bouanani, M. J. Kim, R. M. Wallace, and B. E. Gnade. “Low temperature deposition of hafnium silicate gate dielectrics”, IEEE Journal of Selected Topics in Quantum Electronics 10, 89-100 (2004)
    10. M.A. Quevedo-Lopez, M. El Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, L.J. Chambers and  L. Colombo, “Effect of N incorporation on boron penetration  from p+ polycrystalline Si through HfSixOy  films” Appl. Phys. Lett. 82, 4669 (2003).
    11. P. Punchaipetch, G. Pant, M.A. Quevedo-Lopez, H. Zhang, M. El Bouanani, M.J. Kim, R.M. Wallace and B.E. Gnade, “Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide”, Thin Solid Films 425 (2003) 68-71.
    12. M.A. Quevedo-Lopez, M. El Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, “Boron penetration studies from p+ polycrystalline Si through HfSixOy,” Appl. Phys. Lett. 81, 1074 (2002).
    13. M.A. Quevedo-Lopez, M. El Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, “Phosphorus and arsenic penetration studies through HfSixOy, and HfSixOyNz films,” Appl. Phys. Lett. 81, 1609 (2002).
    14. M. A. Quevedo-Lopez, M. El Bouanani, R. M. Wallace and B. E. Gnade, “Wet Chemical Etching Studies of Zr and Hf-silicate Gate Dielectrics,” J. Vac. Sci. and Technol. A 20(6), 1891(2002).
    15. M. A. Quevedo-Lopez, M. El Bouanani, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan,and L. Colombo, “Interdiffusion Studies for HfSixOy and ZrSixOy on Si,” J. of Appl. Phys. 92, 3540 (2002).
    16. F.D. McDaniel, B.L. Doyle, C. H. Seager, D.S. Walsh, G. Vizkelethy, D.K Brice, C. Yang, P. Rossi, M. Nigham,  M. El Bouanani, G.V. Ravi Prasad, J.C. Schwartz, L.T. Mitchell and J.L. Duggan, “Ionoluminescence decay measured with single ions”, Nucl. Instr. and Meth. B190, 1 (2002).
    17. M. Quevedo-Lopez, M. El Bouanani, S. Addepalli, C. Huang, J.L. Duggan, B.E. Gnade, R.M. Wallace, L. Colombo, M. Douglas, and M. Visokay, “Hafnium diffusion studies of hafnium silicate into silicon”, Appl. Phys. Lett. 79, 4192 (2001).
    18. M. Quevedo-Lopez, M. El Bouanani, S. Addepalli, J.L. Duggan, B.E. Gnade, R.M. Wallace, M. Visokay, M. Douglas, M.J. Bevan and L. Colombo, “Thermally induced Zr incorporation into Si from zirconium silicate thin films”, Appl. Phys. Lett. 79, (2001) 2958.
    19. C. Yang, B.L. Doyle, M. El Bouanani, B.N. Guo, M. Nigham, J.L. Duggan and F.D. McDaniel, “Luminescent Layers for Ion-Photon Emission Microscopy”, Nucl. Instr. and Meth. In Physics Research B 181 (2001) 329-334. #E
    20. B.N. Guo, M. El Bouanani, S.N. Renfrow, M. Nigham, D.S. Walsh, B.L. Doyle, J.L. Duggan and F.D. McDaniel,  “Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeam”, Nucl. Instr. and Meth. In Physics Research  B 181 (2001) 315-319.
    21. A.V. Kuznetsov, E.J. van Veldhuizen, L. Westerberg, V.G. Lyapin, K. Aleklett, W. Loveland, J. Bondorf, B. Jakobsson, H.J. Whitlow and M. El Bouanani,  “A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products”, Nucl. Instr. and Meth. A452 (3) (2000) pp. 525-532
    22. S.A. Datar, B.N. Guo, M. Nigam, D. Necsoiu, Y.J. Zhai, D.E. Smith, C. Yang, M. El Bouanani and F.D. McDaniel, “High sensitivity measurements of As as an impurity in GexSi1-x/Si layered alloys using trace element accelerator mass spectrometry (TEAMS)”, Applied Physics Letters, Vol. 77, No. 4, (2000) 3974
    23. B.N. Guo, S.N. Renfrow, B.L. Doyle, S.D. Walsh, T.J. Aton, M. El Bouanani, J.L. Duggan and F.D. McDaniel, “Ion Beam Induced Charge Collection (IBICC)  Studies on Integrated Circuits Test Structures using a 10 MeV Carbon Microbeam”, Nucl. Instr. and Meth. B 158 (1999) 264-269.
    24. Y. Zhang, M. Hult, L. Persson, H.J. Whitlow, M. Andersson, I.F. Bubb, M. El Bouanani, P.N. Johnston, S.R. Walker, D.D. Cohen, N. Dytlewski, C. Zaring and M. Östling, “Mass and energy dispersive recoil spectrometry studies of low temperature interfacial reactions in the Si/Pd/GaAs and Si/Pd/AlxGa(1-x)As”, Nucl. Instr. and Meth. B136-138 (1998) 719-723.
    25. H.J. Whitlow, S.J. Roosendaal, M. El Bouanani, R. Ghetti, P.N. Johnston, B. Jakobsson, R. Hellborg, H. Petersson, P. Omling, Z. Wang and the CHIC collaboration, “Effects of Energy Deposition by Nuclear Scattering in Silicon p-i-n diode detectors”, Nucl. Instr. and Meth. B135 (1998) 523-531.
    26. L. Persson, M. El Bouanani, M. Hult, H.J. Whitlow,, M. Andersson, I.F. Bubb, P.N. Johnston, S.R. Walker, D.D. Cohen, N. Dytlewski, M. Hult C. Zaring and M. Östling. “Interfacial Reaction Studies of Cr, Ni, Ti and Pt Metallisation on InP”. Journal of Applied Physics 80(6):3346-3354 (1996).
    27. M. Hult, L. Persson, M. El Bouanani, H.J. Whitlow, M. Andersson, M. Östling, C.  Zaring, N. Lundberg, K. Georgsson, D.D. Cohen, N. Dytlewski, P.N. Johnston and S. R. Walker, “Formation of thin films of CoSi2 on GaAs”. Journal of Applied Physics 77:2435-2443 (1995).
    28. M. El Bouanani, H.J. Whitlow, M. Hult, L. Persson, M. Andersson, E. Swietlicki, M. Östling, C. Zaring, P.N. Johnston, S.R. Walker, I.F. Bubb, D.D. Cohen and N. Dytlewski, “Multivariate analysis method for energy calibration and improved mass assignment in recoil spectrometry. Nucl. Instr. and Meth. B94 (1994)530-536
    29. H. Artigalas, A. Chevarier, N. Chevarier, M. El Bouanani, E. Gerlic, N. Moncoffre, B. Roux, M. Stern and J. Tousset, “Nitrogen profiling in nitride films and  nitrogen implanted samples using the 14N(,) and  14N( ,p) reactions at 6 MeV incident energy”. Nucl. Instr. and Meth. B66(1992)237-241
    30. M. El Bouanani, A. Chevarier, N. Chevarier, E. Gerlic, H. Jaffrezic and M. Stern ,  “Argon irradiation damage at Cu/Al2O3 interface for different alumina structures”, Nucl. Instr. and Meth. B50(1990)431-435.
    31. M. El Bouanani, A. Chevarier, N. Chevarier, E. Gerlic, N. Moncoffre, M. Stern, J.C. Magne and B. Aune,  “Ion bombardment effect on Nb/Cu interface studied by RBS, NRS and SEM techniques”, Nucl. Instr. and Meth. B45(1990)651.